wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1. 0 1 n c e 60r900 i nce 60r900 k n - channel super junction power mosfet g eneral d escription the series of devices use advanced super junction technology and design to provide excellent r ds(on) with low gate charge. this super junction mosfet fits the industrys ac - dc smps requirements f or pfc, ac/dc power conversion , and industrial power applications. features new technology for high voltage device low on - resistance and low conduction losses s mall package ultra low gate charge cause lower driving requirements 100% avalanche tested r o hs compliant application power factor correction pfc switched mode power supplies(smps) uninterruptible power supply ups v ds @ t jmax 650 v r ds(on) . 900 m i d 5 a p ackage m arking a nd o rdering i nformation device device package m arking NCE60R900I to - 251 NCE60R900I nce60r900k to - 252 nce60r900k table 1. a bsolute maximum r atings (t c =25 ) parameter symbol value unit drain - source voltage ( v g s = 0v v ds 6 0 0 v gate - source voltage ( v d s = 0v ) v g s 30 v continuous drain current at tc =25 c i d (dc) 5 a continuous drain current at tc=100 c i d (dc) 3 a pulsed drain current (note 1 ) i dm (pluse) 1 5 a drain source voltage slope , vds = 480 v, id = 5 a, tj = 125 c dv/dt 48 v /n s maximum power dissipation (tc=25 ) dera te above 25 c p d 49 0. 39 w w/ c single pulse avalanche energy (note 2 ) e as 13 5 mj avalanche current (note 1 ) i ar 2. 5 a schematic diagram to - 251 to - 252
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1. 0 2 n c e 60r900 i nce 60r900 k parameter symbol value unit r epetitive avalanche energy t ar limited by t jmax (note 1 ) e ar 0.4 mj operating junction and storage tempe rature range t j ,t stg - 55...+150 c table 2. t hermal characteristic parameter symbol value unit thermal resistance junction - to - case maximum r thjc 2.5 5 c /w thermal resistance junction - to - ambient maximum r thj a 75 c /w table 3. e lectrical charac teristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit on/off states drain - source breakdown voltage bv dss v gs =0v i d =250a 6 0 0 v zero gate voltage drain current (tc=25 ) i dss v ds = 6 0 0 v,v gs =0v 1 a zero gate voltage dra in current (tc=125 ) i dss v ds = 6 0 0 v,v gs =0v 50 a gate - body leakage current i gss v gs = 3 0 v,v ds =0v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250a 2 .5 3 3.5 v drain - source on - state resistance r ds(on) v gs = 10 v, i d = 2.5 a 780 9 0 0 m dynamic charac teristics forward transconductance g fs v ds = 20 v, i d = 3 a 4.8 s input capacitance c lss v ds = 50 v,v gs =0v, f=1.0mhz 46 0 p f output capacitance c oss 45 p f reverse transfer capacitance c rss 3.5 p f total gate charge q g v ds = 480 v,i d = 5 a, v gs = 10 v 10 2 0 nc gate - source charge q gs 1.6 nc gate - drain charge q gd 4 nc intrinsic gate resistance r g f = 1 mhz open drain 2.5 s witching times turn - on delay time t d(on) v dd = 380 v,i d = 3 a , r g = 18 ,v gs =10v 6 ns turn - on rise time t r 3 ns turn - off delay time t d(off) 50 60 ns turn - off fall time t f 9 15 ns source - d rain d iode characteristics source - drain current(bo dy diode) i sd t c =25c 5 a pulsed source - drain current(body diode) i sd m 15 a forward on voltage v sd tj=25 c ,i sd =5a,v gs =0v 1 1.3 v reverse recovery time t rr tj=25 c ,i f =5a,di/dt=100a/ s 25 0 ns reverse recovery charge q rr 2. 2 uc peak reverse re covery current i rrm 1 5 a note s : 1.repetitive rating: pulse width limited by maximum junction temperature 2 . tj=25 ,vdd=50v,vg=10v, r g =25
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1. 0 3 n c e 60r900 i nce 60r900 k typical electrical and thermal characteristics (curves) figure1. safe operating area figure 2 . source - drain diode forward voltage figure 3 . output characteristics figure 4 . transfer characteristics figure 5 . static drain - source on resistance figure 6 . r ds(on) vs junction tem perature
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1. 0 4 n c e 60r900 i nce 60r900 k figure 7 . b v dss vs junction temperature figure 8 . maximum i d vs junction temperature figure 9 . gate charge waveforms figure 10 . capacitance figure 11. tran sient thermal impedance
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1. 0 5 n c e 60r900 i nce 60r900 k test circuit 1 gate charge test circuit & waveform 2 switch time test circuit 3 unclamped inductive switchin g test circuit & waveforms
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1. 0 6 n c e 60r900 i nce 60r900 k to - 251 package information symbol dimensions in millimeters dimensions in inches min. max. min. max. a 2.200 2.400 0.087 0.094 a1 1.050 1.350 0.042 0.054 b 1.350 1.650 0.053 0.065 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 d 6.350 6.650 0.250 0.262 d1 5.200 5.400 0.205 0.213 e 5.400 5.700 0.213 0.224 e 2.300 typ 0.091 typ e1 4.500 4.700 0.177 0.185 l 7.500 7.900 0.295 0.311
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1. 0 7 n c e 60r900 i nce 60r900 k to - 252 package information symbol dimensio ns in millimeters dimensions in inches min. max. min. max. a 2.200 2.400 0.087 0.094 a1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 d 6.500 6.700 0.256 0.264 d1 5.100 5.460 0.201 0.215 d2 4 . 83 0 typ. 0.190 typ. e 6. 000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 l 9.800 10.400 0.386 0.409 l1 2.900 typ. 0.114 typ. l2 1.400 1.700 0.055 0.067 l3 1.600 typ. 0.063 typ. l4 0.600 1.000 0.024 0.039 1.100 1.300 0.043 0.051 0 8 0 8 h 0.000 0.300 0.000 0.012 v 5.350 typ. 0.211 typ.
wuxi nce power semiconductor co., ltd page http://www.ncepower.com v1. 0 8 n c e 60r900 i nce 60r900 k attention: any and all nce products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your nce representative nearest you b efore using any nce products described or contained herein in such applications. nce assumes no responsibility for equipment failures that result from using products at valu es that exceed, even momentarily, rated values (such as maximum r atings, operating condition ranges, or other parameters) listed in products specifications of any and all nce products described or contained herein. specifications of any and all nce products described or contained herein stipulate the performance, cha racteristics, and functions of the described products in the independent state, and are not guarantees of the performa nce, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify sy mptoms and s tates that cannot be evaluated in an independent device, the customer should always evaluate and t est devices mounted in the customers products or equipment. nce power semiconductor co.,ltd. strives to supply high - quality high - reliabili ty products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smok e or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prev ention circuits for safe design, redundant design, and structural design. in the event that any or all nce products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such pro ducts must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, includin g photocopying and recording, or any information storage or retrieval system, or otherwise, without th e prior written permissio n of nce power semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example on ly ; it is not guaranteed for volume production. nce believes information herein is accurate and reliable, but no guarantees are made or implied regardin g its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the nce product that you intend to use. this catalog provides information as of mar. 20 10 . specifications and information herein are subject to change without notice.
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